single phase psbh 25 i dav = 32 a half controlled v rrm = 600-1200v rectifier bridge features ? ? package with dcb ceramic base plate ? isolation voltage 3600 v ? planar glass passivated chips ? low forward voltage drop ? leads suitable for pc board soldering ? ul registered, e 148688 applications ? supplies for dc power equipment ? imput rectifier for pwm inverter ? battery dc power supplies ? field supply for dc motors advantages ? easy to mount with two screws ? space and weight savings ? improved temperature and power cycling capability ? high power density ? small and light weight powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 eco-pac tm 1 ? 2005 powersem reserves the right to change limits, test conditions and dimensions data according to iec 60747 refer to a single thyristor unless otherwise stated symbol test conditions maximum ratings i* dav t c = 85 c, (per module) 32 a i trms t vj = t vjm -a i tavm t c = 85 c, 180 sine, per thyristor 16 a i tsm t vj = 45 c t = 10 ms (50 hz), sine 200 a v r = 0 t = 8.3 ms (60 hz), sine 210 a t vj = t vjm t = 10 ms (50 hz), sine 180 a v r = 0 t = 8.3 ms (60 hz), sine 190 a i 2 dt t vj = 45 c t = 10 ms (50 hz), sine 200 a2s v r = 0 t = 8.3 ms (60 hz), sine 150 a2s t vj = t vjm t = 10 ms (50 hz), sine 160 a2s v r = 0 t = 8.3 ms (60 hz), sine 150 a2s (di/dt) cr t vj = t vjm repetitive, i t = 20 a 100 a/s f=50hz, t p =200s v d =2/3v drm i g =0.15 a non repetitive,i t = i tavm 500 a/s di g /dt=0.15a/s (dv/dt) cr t vj = t vjm v d =2/3v drm 500 v/s r gk = , method 1 (linear voltage rise) p gm t vj = t vjm t p =30s 5 w i t = i tavm t p =300s 2.5 w p gavm 0.5 w v rgm 10 v t vj -40... + 125 c t vjm 125 c t stg -40... + 125 c v isol 50/60 hz, rms t = 1 min 2500 v i isol 1 ma t = 1 s 3000 v m d mounting torque (m4) 1.5 - 1.8 n m 14 - 16 lb.in. weight typ. 16 g *for resistive load at bridge output preliminary data sheet v rsm v rrm type v dsm v drm (v) (v) 700 600 psbh 25/06 900 800 psbh 25/08 1300 1200 psbh 25/12
eco-pac tm 1 powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2005 powersem reserves the right to change limits, test conditions and dimensions symbol test conditions characteristic value i d, i r t vj = t vjm , v r = v rrm , v d =v drm 5ma v t i t = 20 a, t vj = 25 c 1.6 v v to for power-loss calculations only (t vj = t vjm ) 0.8 v r t 27 m ? v gt v d = 6v t vj = 25c 1.5 v t vj =-40c 2.5 v i gt v d = 6v t vj = 25c 25 ma t vj =-40c 50 ma v gd t vj = 125c v d =2/3v drm 0.2 v i gd t vj = 125c v d =2/3v drm 3ma i l t vj = 25c, t p =10s 75 ma i g =0.1a, di g /dt=0.1a/s i h t vj = 25c, v d =6v, r gk = ? 50 ma t gd t vj = 25c, v d =1/2v drm 2s i g =0.1a, di g /dt=0.1a/s r thjc per thyristor; dc 1.3 k/w per module 0.33 k/w r thjk per thyristor; dc 1.8 k/w per module 0.45 k/w d s creeping distance on surface 11.2 m m d a creeping distance in air 9.5 m m a max. allowable acceleration 50 m/s2 package style and outline dimensions in mm (1mm = 0.0394?)
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